Nanoscale Device Modeling Research Positions 
IBM India Semiconductor Research and Development Center, Bangalore 
IBM India Research Laboratory, Bangalore 

The IBM India Semiconductor Research and Development Center and India Research
Laboratory invite applications from outstanding scientists/engineers for
multiple positions in the area of nano science and technology at IBM, Bangalore,
India. Candidates are expected to contribute to the design, theory, and modeling
of next generation semiconductor nanodevices. The research and development work
involves ab-initio physics based modeling and Technology-CAD for the 22/14nm and
beyond devices. 

Atomistic/Quantum Effects in Nanodevices : 

This work involves theory and modeling of quantum effects in 22/14nm and beyond
devices: these include carrier transport, band-structure, high-k materials
modeling, workfunction engineering and related phenomena for enabling advanced
22/14nm high performance, and low power devices. Second area of interest is in
materials/devices physics and modeling, including mixed ionic/electronic
conduction materials, work-function engineering, and related phenomenon for
phase change memory. 

Candidates to be considered for this area are required to have a strong
understanding of solid-state physics, semiconductor device physics/engineering
and related areas. Candidates are also expected to have a strong background
electronic structure methods, numerical programming, hands on experience with
ab-initio modeling tools, and computer programming in mixed language environment. 

Technology – CAD Development: 

This work involves the improvement and development of an IBM proprietary tool
for the simulation of leading edge semiconductor devices.  In particular,
physical and numerical models for carrier transport influenced by e.g., channel
materials, strain, high-k materials, and crystallographic orientation on device
performance, will be developed and implemented. 

A comprehensive knowledge of modern device physics is essential for these
positions, including both FET and BJT device operation, as well as bulk and
Silicon-on-Insulator device structures. A good working experience of TCAD based
process and device simulations is required. Also, a good background and
understanding of quantum phenomenon relevant to semiconductor nanodevices is
essential. Computer/Software Skills – Demonstrated proficiency with C++, C, and
Tcl are required, and experience with team-based large scale software design is
desired. Familiarity with concepts related to numerical solution of PDEs, and
the ability to realize robust numerical implementations of semiconductor-related
physical models in discretized form, are highly desired. Experience with
scientific computation on massively parallel computer architectures is a plus.
Familiarity with the Linux and/or AIX operating systems, as well as the AFS file
system, would be an added plus. 


TCAD Process and Device Modeling :
This work involves modeling of nanoscale phenomena including process,
semiconductor related physical models, carrier transport, band-structure, for
high performance and low power 22/14nm devices. A comprehensive knowledge of
modern device physics is essential for these positions, including both FET and
BJT device operation, as well as bulk and Silion-on-Insulator device structures. 

Candidates for this area are expected to have a good working experience of TCAD
based process and device simulations. Also, a good background and understanding
of quantum phenomenon relevant to semiconductor nanodevices is essential.
Demonstrated proficiency with TCAD process and devices simulators is a must. 
Programming skills with C++, C, and Tcl, familiarity with concepts related to
numerical solution of PDEs to realize semiconductor-related physical models is a
plus. Familiarity with the Linux and/or AIX operating systems, as well as the
AFS file system, would be an added plus. 

Qualifications : 

Interested applicants for the above regular research positions should have a
Ph.D/MS in Physics, Electrical Engineering, Applied Physics, Computer Science,
or Theoretical Materials Science. Please send your resume to,
kotamurali(AT)in.ibm.com 

About IBM Semiconductor Research and Development Center: 

IBM's Semiconductor Research and Development Center is responsible for the
definition and development of industry leading technologies such as Copper
Interconnect, Silicon on Insulator (SOI), High-Performance Logic-Based Embedded
DRAM technologies, and SiGe for RF and analog applications, and high-k material
technologies. SRDC is also the leading organization in defining the most
advanced technologies for the 45 nm and 22 nm nodes, including research in
various aspects of Lithography, strained silicon, and Magnetic RAM (MRAM). IBM
SRDC develops all of IBM’s semiconductor technologies including SOI, Bulk CMOS,
RFCMOS, HV CMOS, SiGe HBT BiCMOS, and nanodevice technologies. For more
information about leadership semiconductor technologies at IBM, please visit
www.ibm.com/chips. 

About IBM Research: 
For more information about IBM Research, please visit http://www.research.ibm.com/