Does anyone know why if I change the inlet concentration of a precursor gas the deposition rate remains the same?

What does CVD represent?

Hallo,

it depends from case to case. Usually you have a limitation, coming from the deposition mechanism. It means that during deposition, you have a step during which, the precursor must get to the surface of your wafer. This can happen through absorbtion and so on. The limiting step is the amount of free places on your surface. As far as these places are limited you don't have any posibility to increase your deposition rate by increasing the concentration of your precursor. If the mechanism is known, try to influence some steps, like desorbtion, reaktion rate (through pressure and temperature variation).

hope it helps.

Jannis