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September 26, 2011, 01:34 |
Equillibrium Reactions
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#1 |
New Member
sulabh gupta
Join Date: Jul 2010
Posts: 9
Rep Power: 15 |
Hi everyone
I have just started using CFD ACE. I have a small query regarding how to set a equillibrium reaction in CFD ACE. Thank you |
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January 17, 2012, 03:43 |
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#2 |
New Member
Majid S.
Join Date: Jan 2012
Location: mumbai
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sure let me know if its not too late
Majid |
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January 17, 2012, 03:56 |
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#3 |
New Member
sulabh gupta
Join Date: Jul 2010
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Rep Power: 15 |
i got that dude .... facing some other problem related to volume reaction along with surface reaction .....
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January 17, 2012, 03:59 |
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#4 |
New Member
Majid S.
Join Date: Jan 2012
Location: mumbai
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and whats that?
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January 17, 2012, 04:25 |
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#5 |
New Member
sulabh gupta
Join Date: Jul 2010
Posts: 9
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If you have to solve for both reactions taking place in the volume of the reactor and one reaction on the surface of the reactor than how to proceed ...
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January 17, 2012, 05:25 |
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#6 |
New Member
Majid S.
Join Date: Jan 2012
Location: mumbai
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well, you can define the surface reaction on the boundary condition under chemical rex tab and volume reaction can be defined in volume condition again in chemical reaction tab
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January 17, 2012, 06:46 |
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#7 |
New Member
sulabh gupta
Join Date: Jul 2010
Posts: 9
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i knw that but the solution is not converged ....the reaction happens in some fractions of the reactor volume...
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January 17, 2012, 13:47 |
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#8 |
New Member
Rahul
Join Date: Jan 2012
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Is it Instantaneous reaction problem?
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January 17, 2012, 23:50 |
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#9 |
New Member
sulabh gupta
Join Date: Jul 2010
Posts: 9
Rep Power: 15 |
No you have a reaction rate constant .... we can also take equilibrium reaction rate constant....
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January 18, 2012, 12:52 |
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#10 |
New Member
Rahul
Join Date: Jan 2012
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Its is difficult to answer this query without looking into the problem.
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January 20, 2012, 00:27 |
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#11 |
New Member
sulabh gupta
Join Date: Jul 2010
Posts: 9
Rep Power: 15 |
The problem is I am simulating a Chemical Vapor Deposition Reactor for production of silicon. The reactor configuration is such that you have an U shape rod where deposition takes place .Its basically Seimens process for production of Silicon.
the surface reaction is SIHCL3+H2->SI(B)+3HCL along with this there are several volume reactions one of which is SIHCL3->HCL+SICL2 how to proceed in this case . Ty |
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