Simulation of vertical Bridgman,enthalpy-porosity

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A question about Numerical simulation of vertical Bridgman crystal growth using enthalpy-porosity method I¡¯m writing my code to simulate the CdTe growth process, and yesterday I encountered a hard nut to crack. I employ a traditional method, enthalpy-porosity formulation with fixed-grid, which has been implemented in Fluent. From several prior papers, I knew that the increasing ampoule pulling rates have the impact on the solid/liquid interface shape. But, I have no idea how to incorporate the pulling rate V into the governing equations. The computation is assumed in the steady state where the pulling rate equals to the crystal growth rate. Please give me a hint or some valuable references. Thanks. BTW, my technique comes from Pro. Shyy Wei¡¯s books and papers.